Swbstrad
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Waffer swbstrad SiC 4H-N 8 modfedd Silicon Carbide Dymi Ymchwil gradd 500um trwch
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4H-N/6H-N Cynhyrchu Ymchwil Waffer SiC Ffug gradd Dia150mm swbstrad silicon carbid
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Wafferi SiC Silicon Carbide 8 modfedd 200mm 4H-N math Cynhyrchu gradd 500um trwch
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Dia300x1.0mmt Trwch Wafer Sapphire C-Plane SSP/DSP
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8 modfedd 200mm swbstrad Sapphire wafer saffir trwch tenau 1SP 2SP 0.5mm 0.75mm
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Wafer carbid silicon SiC 8 modfedd 4H-N math 0.5mm cynhyrchu gradd ymchwil gradd swbstrad caboledig arferiad
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Dia afrlladen HPSI SiC: trwch 3 modfedd: 350um ± 25 µm ar gyfer Power Electronics
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Grisial sengl Al2O3 99.999% Wafferi saffir Dia200mm 1.0mm 0.75mm trwch
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Wafer Sapphire 156mm 159mm 6 modfedd ar gyfer cludwrC-Plane DSP TTV
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Echel C/A/M wafferi saffir 4 modfedd grisial sengl Al2O3, swbstrad saffir caledwch uchel SSP DSP
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Lled-Insiwleiddio purdeb 3 modfedd uchel （HPSI） Wafferi SiC 350um gradd ffug gradd Prime
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P-math SiC swbstrad SiC wafer Dia2inch cynnyrch newydd